论文信息 - Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN - 字舞流文

Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN

A. Tsatsul'nikov | S. Troshkov | S. Kukushkin | L. Sorokin | V. V. Lundin | M. Rozhavskaya | A. Myasoedov | A. Osipov