论文信息 - Cathodoluminescence characterization of Ge‐doped CdTe crystals

Cathodoluminescence characterization of Ge‐doped CdTe crystals

Cathodoluminescence (CL) microscopic techniques have been used to study the spatial distribution of structural defects and the deep levels in CdTe:Ge bulk crystals. The effect of Ge doping with concentrations of 1017 and 1019 cm−3 on the compensation of VCd in CdTe has been investigated. Dependence of the intensity distribution of CL emission bands on the dopant concentration has been studied. Ge doping causes a substantial reduction of the generally referred to 1.40 eV luminescence, which is often present in undoped CdTe crystals, and enhances the 0.91 and 0.81 eV emissions.

U. Pal | E. Dieguez | P. Fernández | J. Piqueras | N. Sochinskii

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