论文信息 - High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In/sub 0.53/Ga/sub 0.47/As photodetectors

High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In/sub 0.53/Ga/sub 0.47/As photodetectors

We demonstrate greater than 90% quantum efficiency in an In/sub 0.53/Ga/sub 0.47/As photodetector with a thin (900 /spl Aring/) absorbing layer. This was achieved by inserting the In/sub 0.53/Ga/sub 0.47/As/InP epitaxial layer into a microcavity composed of a GaAs/AlAs quarter-wavelength stack (QWS) and a Si/SiO/sub 2/ dielectric mirror. The 900-/spl Aring/-thick In/sub 0.53/Ga/sub 0.47/As layer was wafer fused to a GaAs/AlAs mirror, having nearly 100% power reflectivity. A Si/SiO/sub 2/ dielectric mirror was subsequently deposited onto the wafer-fused photodiode to form an asymmetric Fabry-Perot cavity. The external quantum efficiency and absorption bandwidth for the wafer-fused RCE photodiodes were measured to be 94/spl plusmn/3% and 14 nm, respectively. To our knowledge, these wafer-fused RCE photodetectors have the highest external quantum efficiency and narrowest absorption bandwidth ever reported on the long-wavelength resonant-cavity-enhanced photodetectors.<<ETX>>

[1] J. Campbell,et al. High quantum efficiency, long wavelength InP/InGaAs microcavity photodiode , 1991 .

[2] J. Chyi,et al. Resonant cavity-enhanced (RCE) photodetectors , 1991 .

[3] Resonant-cavity-enhanced pin photodetector with 17 GHz bandwidth-efficiency product , 1994 .

[4] A. J. Moseley,et al. Measurement of absorption coefficients of Ga 0.47 In 0.53 As over the wavelength range 1.0-1.7 μm , 1985 .

[5] S. Adachi. GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications , 1985 .

[6] Analysis of wafer fusing for 1.3 μm vertical cavity surface emitting lasers , 1993 .

[7] Rajeev J Ram,et al. Low threshold, wafer fused long wavelength vertical cavity lasers , 1994 .

[8] Albert Chin,et al. Enhancement of quantum efficiency in thin photodiodes through absorptive resonance , 1991 .

[9] A. Dodabalapur,et al. Resonant‐cavity InGaAlAs/InGaAs/InAlAs phototransistors with high gain for 1.3–1.6 μm , 1992 .

[10] L. Coldren,et al. Refractive indexes of (Al,Ga,In)As epilayers on InP for optoelectronic applications , 1992, IEEE Photonics Technology Letters.

[11] Sadao Adachi,et al. Refractive indices of III–V compounds: Key properties of InGaAsP relevant to device design , 1982 .