论文信息 - Analysis of diode lasers with lateral spatial variations in thickness (A)

Analysis of diode lasers with lateral spatial variations in thickness (A)

Diode lasers with active and/or cladding regions whose thicknesses vary spatially parallel to the p‐n junction are analyzed. It is shown that lateral real‐refractive‐index waveguiding occurs and that a diffusion gradient exists which propels the injected charges into the lasing modal volume. Lateral mode patterns and thresholds are calculated and sensitivity to higher‐order lateral mode oscillation is evaluated for various stripe widths and spreading resistances. Results are shown to agree well with experimental data.

[1] D. Scifres,et al. Nonplanar large optical cavity GaAs/GaAlAs semiconductor laser , 1979 .

[2] Paul Anthony Kirkby,et al. Channelled-substrate narrow-stripe GaAs/GaAlAs injection lasers with extremely low threshold currents , 1979 .

[3] Paul Anthony Kirkby,et al. CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE GAAS-(GAAL)AS INJECTION-LASERS , 1976 .

[4] D. Scifres,et al. Etched buried heterostructure GaAs/GaAlAs injection lasers , 1975 .

[5] E. Kapon,et al. Application of the equivalent-index method to DH diode lasers. , 1979, Applied optics.

[6] K. Nishida,et al. Transverse mode stabilized AlGaAs/GaAs plano-convex waveguide laser made by a single-step liquid phase epitaxy , 1980 .

[7] H. Casey,et al. Heterostructure lasers , 1978 .

[8] Martin A. Afromowitz,et al. Refractive index of Ga1−xAlxAs , 1974 .

[9] Won-Tien Tsang,et al. The effects of lateral current spreading, carrier out‐diffusion, and optical mode losses on the threshold current density of GaAs‐AlχGa1−χAs stripe‐geometry DH lasers , 1978 .

[10] Dan Botez,et al. Singe‐mode cw operation of ’’double‐dovetail’’ constricted DH (AlGa)As diode lasers , 1978 .

[11] Kohroh Kobayashi,et al. A GaAs-AlxGa1-xAs Double Heterostructure Planar Stripe Laser , 1973 .