The Physics of Emission-Recombination in Multiquantum Well Structures

The emission-recombination mechanisms at quantum wells (QWs) have been studied by Impedance Spectroscopy (IS), Deep Level Optical Spectroscopy (DLOS) and Photoconductive gain measurements for different QW thicknesses, barrier widths and applied electric fields. These studies show that those QWs behave as giant two-dimensional traps for which capture rates and emission probabilities are determined. Those measurements explain very satisfactorily the QW detector performances. Particularly, the concept of QW capture velocity is shown to be more relevant than the capture time one. The measured values of capture velocities compare well with the theoretical results on optical phonon mediated transitions from barrier to well states.

[1]  Emmanuel Rosencher,et al.  Intersubband transitions in quantum wells , 1992 .

[2]  J. M. Kuo,et al.  Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors , 1992 .

[3]  Wolter,et al.  Carrier capture into a semiconductor quantum well. , 1993, Physical review. B, Condensed matter.

[4]  E. H. Nicollian,et al.  The si-sio, interface – electrical properties as determined by the metal-insulator-silicon conductance technique , 1967 .

[5]  Amnon Yariv,et al.  Performance limitations of GaAs/AlGaAs infrared superlattices , 1989 .

[6]  M. Buchanan,et al.  Dark current in quantum well infrared photodetectors , 1993 .

[7]  B. F. Levine,et al.  Quantum‐well infrared photodetectors , 1993 .

[8]  A. S. Grove Physics and Technology of Semiconductor Devices , 1967 .

[9]  A. Chantre,et al.  Deep-level optical spectroscopy in GaAs , 1981 .

[10]  H. Grubin The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[11]  E. Rosencher,et al.  Intersubband optical transients in multi‐quantum‐well structures , 1993 .

[12]  W. Read,et al.  Statistics of the Recombinations of Holes and Electrons , 1952 .

[13]  E. Rosencher,et al.  Injection mechanism at contacts in a quantum‐well intersubband infrared detector , 1992 .

[14]  Hui Chun Liu,et al.  Photoconductive gain mechanism of quantum‐well intersubband infrared detectors , 1992 .

[15]  V. D. Shadrin,et al.  The theory of multiple quantum-well GaAs-AlGaAs infrared detectors , 1992 .

[16]  Brum,et al.  Resonant carrier capture by semiconductor quantum wells. , 1986, Physical review. B, Condensed matter.

[17]  E. Costard,et al.  Electric Field Effects on Bound to Quasibound Intersubband Absorption and Photocurrent in GaAs/AlGaAs Quantum Wells , 1992 .

[18]  E. Rosencher,et al.  Discrepancies between photocurrent and absorption spectroscopies in intersubband photoionization from GaAs/AlGaAs multiquantum wells , 1991 .