Reliability and electrical properties of new low dielectric constant interlevel dielectrics for high performance ULSI interconnect
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P. K. Vasudev | Thomas E. Seidel | T. Seidel | P. Vasudev | B. Zhao | Steven G. Anderson | S.-Q. Wang | M. Fiebig | B. Zhao | S.-Q. Wang | M. Fiebig | S. Anderson
[1] Y. Homma,et al. Low capacitance multilevel interconnection using low-/spl epsi/ organic spin-on glass for quarter-micron high-speed ULSIs , 1995, 1995 Symposium on VLSI Technology. Digest of Technical Papers.
[2] Charvaka Duvvury,et al. Trends for deep submicron VLSI and their implications for reliability , 1995, Proceedings of 1995 IEEE International Reliability Physics Symposium.
[3] S. Jeng,et al. Preparation of low-density xerogels at ambient pressure for low K dielectrics , 1995 .
[4] Alvin P. Kennedy,et al. Perfluorocyclobutane aromatic ether polymers , 1993 .
[5] T. Lu,et al. Vapor Deposition Of Very Low K Polymer Films, Poly(Naphthalene), Poly(Fluorinated Naphthalene) , 1995 .
[6] T. Seidel,et al. Methods And Needs For Low K Material Research , 1995 .
[7] Shinichi Ito,et al. Application of Surface Reformed Thick Spin‐on‐Glass to MOS Device Planarization , 1990 .
[8] Ashok K. Sinha,et al. A novel 0.25 /spl mu/m via plug process using low temperature CVD Al/TiN , 1995, Proceedings of International Electron Devices Meeting.
[9] J. Hedrick,et al. Polyimide Nanofoams For Low Dielectric Applications , 1995 .
[10] J. Wetzel,et al. Integration Of BPDA-PDA Polyimide With Two Levels Of Al(Cu) Interconnects , 1995 .
[11] T. Homma. Fluorinated interlayer dielectric films in ULSI multilevel interconnections , 1994 .
[12] L. Hrubesh,et al. Dielectric properties of aerogels , 1993 .
[13] T. Tatsumi,et al. Preparation And Properties Of Fluorinated Amorphous Carbon Thin Films By Plasma Enhanced Chemical Vapor Deposition , 1995 .
[14] W. Hunter. The implications of self-consistent current density design guidelines comprehending electromigration and Joule heating for interconnect technology evolution , 1995, Proceedings of International Electron Devices Meeting.