Turn-Off Characteristics of Power Transistors Using Emitter-Open Turn-Off
暂无分享,去创建一个
As compared with conventional reverse-biased turn-off, emitteropen turn-off provides superior transistor turn-off characteristics. Not only are the storage time and the fall time of the power transsistors much reduced, but also the device reverse-biased second breakdown phenomenon, commonly associated with turn-off of inductive load, is eliminated. Furthermore the storage time tolerance due to device variation and temperature change is minimized.
[1] W. Shockley,et al. Secondary breakdown and hot spots in power transistors , 1963 .
[2] Barry Jackson,et al. Effects of Emitter-Open switching on the turn-off characteristics of high-voltage power transistors , 1980, 1980 IEEE Power Electronics Specialists Conference.
[3] P. L. Hower,et al. Avalanche injection and second breakdown in transistors , 1970 .