论文信息 - High concentration effects of ion implanted boron in silicon

High concentration effects of ion implanted boron in silicon

The diffusion behaviour of implanted boron in silicon was investigated using the10B(n,α)7 Li nuclear reaction. An anomalous behavior with a strong reduction of the diffusivity above an effective solubility limit at 1.5×1019, 6×1019, and 1.1×1020 cm−3 was found for annealing temperatures of 800, 900, and 1,000°C, respectively.

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