Combining grazing incidence X-ray diffraction and X-ray reflectivity for the evaluation of the structural evolution of HfO2 thin films with annealing

[1]  G. Tallarida,et al.  Effects of growth temperature on the properties of atomic layer deposition grown ZrO2 films , 2003 .

[2]  Je-Hun Lee,et al.  Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition , 2002 .

[3]  G. Tallarida,et al.  Structural and electrical characterization of ALCVD ZrO2 thin films on silicon , 2002 .

[4]  J. Stehle,et al.  Characterization of ultrathin gate dielectrics by grazing X-ray reflectance and VUV spectroscopic ellipsometry on the same instrument , 2002 .

[5]  Howard R. Huff,et al.  Experimental observations of the thermal stability of high-k gate dielectric materials on silicon , 2002 .

[6]  K. Kukli,et al.  Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon , 2002 .

[7]  D. Vanderbilt,et al.  First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide , 2002, cond-mat/0202454.

[8]  Jane P. Chang,et al.  Ultrathin zirconium oxide films as alternative gate dielectrics , 2001 .

[9]  J. Aarik,et al.  Texture development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition , 2000 .

[10]  N. Popa.  Texture in Rietveld refinement , 1992 .

[11]  J. F. Conley,et al.  Atomic layer deposition of thin hafnium oxide films using a carbon free precursor , 2003 .

[12]  応用物理学会.  Extended abstracts of International Workshop on Gate Insulator 2003 : IWGI 2003 November 6-7, 2003, Tokyo, Japan , 2003 .

[13]  R. Wallace,et al.  Hafnium and zirconium silicates for advanced gate dielectrics , 2000 .

[14]  A. Gibaud,et al.  X-ray and neutron reflectivity : principles and applications , 1999 .