A New Current-Sweep Method for Assessing the Mixed-Mode Damage Spectrum of SiGe HBTs
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Peng Cheng | Chendong Zhu | J. Cressler | Chendong Zhu | P. Cheng | J.D. Cressler | A. Appaswamy | A. Appaswamy
[1] Alvin J. Joseph,et al. SiGe HBT performance and reliability trends through f/sub T/ of 350 GHz , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..
[2] Degradation and recovery of SiGe HBTs following radiation and hot-carrier stressing , 2004 .
[3] G.A.M. Hurkx,et al. Physical Description of the Mixed-Mode Degradation Mechanism for High Performance Bipolar Transistors , 2006, 2006 Bipolar/BiCMOS Circuits and Technology Meeting.
[4] Themixed-Mode Damage Spectrum of Sige HBTs , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
[5] Alvin J. Joseph,et al. Current status and future trends of SiGe BiCMOS technology , 2001 .
[6] B. Jagannathan,et al. A 0.18 /spl mu/m BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect , 2001, Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).
[7] S. Jeng,et al. Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology , 2002, IEEE Electron Device Letters.
[8] T. Vanhoucke,et al. Revised method for extraction of the thermal resistance applied to bulk and SOI SiGe HBTs , 2004, IEEE Electron Device Letters.
[9] Guofu Niu,et al. Damage mechanisms in impact-ionization-induced mixed-mode reliability degradation of SiGe HBTs , 2005, IEEE Transactions on Device and Materials Reliability.
[10] B. Jagannathan,et al. Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors , 2001, 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496).
[11] M. Racanelli,et al. SiGe BiCMOS technology for communication products , 2003, Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003..
[12] Peng Cheng,et al. Impact of Scaling on the Inverse-Mode Operation of SiGe HBTs , 2007, IEEE Transactions on Electron Devices.
[13] John D. Cressler,et al. Hot electron and hot hole degradation of UHV/CVD SiGe HBT's , 2000 .
[14] peixiong zhao,et al. Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs , 1995 .
[15] T. Vanhoucke,et al. Time-to-Fail Extraction Model for the "Mixed-Mode" Reliability of High-Performance SiGe Bipolar Transistors , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.
[16] J. Cressler,et al. A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors , 2002 .
[17] V. D. Archer,et al. Characteristics of impact-ionization current in the advanced self-aligned polysilicon-emitter bipolar transistor , 1991 .