Photomask and Next-Generation Lithography Mask Technology XVII

[1]  Jin Choi,et al.  A novel pattern error detecting algorithm for SEM images of mask monitoring patterns , 2010, Photomask Japan.

[2]  Takashi Hirano,et al.  Future application of e-beam repair tool beyond 3X generation , 2010, Photomask Japan.

[3]  Shmoolik Mangan,et al.  Evaluation of novel EUV mask inspection technologies , 2010, Photomask Japan.

[4]  Sang Pyo Kim,et al.  Compensating for image placement errors for the HP 3X nm node , 2010, Photomask Japan.

[5]  Guangming Xiao,et al.  Improvement of KrF contact layer by inverse lithography technology with assist feature , 2010, Photomask Japan.

[6]  Tadahiko Takikawa,et al.  Characterization of line-width roughness about 22-32nm node EUV mask , 2010, Photomask Japan.

[7]  Masaru Higuchi,et al.  Contact mask LER impact on lithographic performance , 2010, Photomask Japan.

[8]  Christophe Pierrat,et al.  Efficiently writing circular contacts on production reticle , 2010, Photomask Japan.

[9]  Masafumi Asano,et al.  Effective-exposure-dose monitoring technique in EUV lithography , 2010, Photomask Japan.

[10]  Johnny Yeap,et al.  Machine specific fracture optimization for JEOL e-beam mask writer , 2010, Photomask Japan.

[11]  Masaki Yamabe,et al.  Mask inspection system with variable sensitivity and printability verification function , 2010, Photomask Japan.

[12]  Han-Ku Cho,et al.  The optical CD metrology for EUV mask , 2010, Photomask Japan.

[13]  Gregg Inderhees,et al.  EUV mask inspection with 193 nm inspector for 32 and 22 nm HP , 2010, Photomask Japan.

[14]  Michael Ben Yishai,et al.  Photomask defect detection and inspection: aerial imaging and high resolution inspection strategies , 2010, Photomask Japan.

[15]  Eiji Yamanaka,et al.  Fine pixel SEM image for EUV mask pattern 3D quality assurance based on lithography simulation , 2010, Photomask Japan.

[16]  Edmund Y. Lam,et al.  Aberration-aware robust mask design with level-set-based inverse lithography , 2010, Photomask Japan.

[17]  Hajime Aoyama,et al.  Challenges in flare correction in EUVL lithography for half pitch 22-nm generation , 2010, Photomask Japan.

[18]  Guangming Xiao,et al.  E-beam writing time improvement for inverse lithography technology mask for full-chip , 2010, Photomask Japan.

[19]  Kazuya Ota,et al.  Evaluation of transfer of particles from dual-pod base plate to EUV mask , 2010, Photomask Japan.

[20]  Masaki Yamabe,et al.  Evaluation of mask manufacturing efficiency using mask data rank information , 2010, Photomask Japan.

[21]  Osamu Suga,et al.  FIB-CVD technology for EUV mask repair , 2010, Photomask Japan.

[22]  David S. Alles,et al.  Results from a new 193nm die-to-database reticle inspection platform , 2010, Photomask Japan.

[23]  Nick Knupffer.  Intel Corporation , 2018, The Grants Register 2019.

[24]  Naoya Hayashi,et al.  Short-range electron backscattering from EUV masks , 2010, Photomask Japan.

[25]  Hideo Kobayashi,et al.  Challenges for quality 15nm groove patterning with ZEP520A for a master fabrication for track pitch 50nm full-surface DTR-Media , 2010, Photomask Japan.

[26]  Roy White,et al.  Nanomachining of non-orthogonal mask patterns , 2010, Photomask Japan.

[27]  Hiroyuki Miyashita,et al.  Increased productivity of repair verification by offline analysis of aerial images , 2010, Photomask Japan.