A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs

The development and behavior of a new model for Motorola's LDMOS transistor is described. The model includes self-heating effects, produces accurate small-signal simulations as well as large-signal, harmonic-balance simulations and also operates in the transient mode. It is simpler than previous models, yet it accurately predicts mixed signal effects, such as intermodulation distortion.

[1]  M. Miller,et al.  A new empirical large signal model for silicon RF LDMOS FETs , 1997, 1997 IEEE MTT-S Symposium on Technologies for Wireless Applications Digest.

[2]  R. Culbertson,et al.  A physical large signal Si MOSFET model for RF circuit design , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.