Device parameters extracted in the linear region of MOSFET by comparing with the exact gradual channel model

Abstract The ID–VG characteristics of short channel devices are analyzed to derive the Eeff dependent mobility and the device parameters including the series resistance, R. The exact gradual channel model is used to extract the surface potential and the vertical electric field, Eeff. Based on the experimental data that rD linearly depends on 1/(VG−VT), the formula for mobility–Eeff dependence should have two fitting parameters. Five possible formulas are advised, and they are found to fit equally well in the NMOS devices from five different technologies. It is verified that the mobility decreases linearly with Eeff by assuming that the maximum mobility, μ0 obtained by extrapolating down to Eeff=0, is close to the bulk mobility. Compared with a similar analysis as given above, the simple extraction method previously proposed by the author cannot predict the mobility at Eeff=0, but predicts R and ΔLG accurately, and is considered useful in quickly extracting the device parameters of scaled devices.

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