Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs (001) substrate

Various low-temperature (LT) ultra-thin buffer layers have been fabricated on the GaAs (001) substrate. The buffer layer is decoupled from the host substrate by introducing low-temperature defects. The 400 nm In0.25Ga0.75As films were grown on these substrates to test the 'compliant' effects of the buffer layers. Atomic force microscopy, photoluminescence, double crystal x-ray diffraction and transmission electron microscopy were used to estimate the quality of the ln(0.25)Ga(0.75)As layer. The measurements indicated that the misfit strains in the epilayer can be accommodated by the LT ultra-thin buffer layer. The strain accommodation effects of the LT defects have been discussed in detail.

[1]  Jurgen Michel,et al.  Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates , 1991 .

[2]  J. Harris,et al.  1.3 μm electroabsorption reflection modulators on GaAs , 1993 .

[3]  K. Kavanagh,et al.  Gas-source molecular beam epitaxial growth, characterization, and light-emitting diode application of InxGa1-xP on GaP(100) , 1993 .

[4]  Bernard S. Meyerson,et al.  Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures , 1995 .

[5]  Q. Huang,et al.  Low-temperature buffer layer for growth of a low-dislocation-density SiGe layer on Si by molecular-beam epitaxy , 1996 .

[6]  W. H. Weinberg,et al.  Kinetics of strain relaxation through misfit dislocation formation in the growth of epitaxial films on compliant substrates , 1998 .

[7]  S. Hersee,et al.  Nanoheteroepitaxy: The Application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials , 1999 .

[8]  W. H. Weinberg,et al.  Mechanical behavior of thin buffer layers in InAs/GaAs(111)A heteroepitaxy , 2000 .

[9]  B. Holländer,et al.  Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures , 2000 .

[10]  F. Y. Huang.  Effect of strain transfer on critical thickness for epitaxial layers grown on compliant substrate , 2000 .

[11]  J. Speck,et al.  Relaxation enhancing interlayers (REIs) in threading dislocation reduction , 2000 .

[12]  Kang L. Wang,et al.  Compliant effect of low-temperature Si buffer for SiGe growth , 2001 .

[13]  Kang L. Wang,et al.  High-quality strain-relaxed SiGe films grown with low temperature Si buffer , 2001 .

[14]  M. Calleja,et al.  In situ laser light scattering studies on the influence of kinetics on surface morphology during growth of In0.2Ga0.8As/GaAs , 2001 .

[15]  In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate , 2003 .