Mechanism for coupling between properties of interfaces and bulk semiconductors

A mechanism is described by which interface electronic properties can affect bulk semiconductor behavior. In particular, experimental measurements by photoreflectance of Si(100)-SiO 2 interfaces show how a controllable degree of band bending can be introduced near the interface by ion bombardment and annealing. The resulting electric field near the interface can affect dopant concentration profiles deep within the semiconductor bulk by drastically changing the effective interfacial boundary condition for annihilation of charged interstitial atoms formed during bombardment. Kinetic measurements of band-bending evolution during annealing show that the bending persists for substantial periods even above 1000 °C. Unusually low activation energies for the evolution point to a distribution of energies for healing of bombardment-generated interface defects. The findings have significant implications for p-n junction formation during complementary metal oxide semiconductor device processing.

[1]  S. Decoutere,et al.  Transient enhanced diffusion of Boron in Si , 2002 .

[2]  R. Nieminen,et al.  First-principles calculations of interstitial boron in silicon , 2000 .

[3]  Dopant dose loss at the Si–SiO2 interface , 2000 .

[4]  N. Cowern,et al.  Transient diffusion of ion‐implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles , 1990 .

[5]  C. Christofides.  Annealing kinetics of defects of ion-implanted and furnace-annealed silicon layers: thermodynamic approach , 1992 .

[6]  E. Seebauer,et al.  Optimization of selective TiSi2 chemical vapor deposition by mechanistic chemical kinetics , 1996 .

[7]  E. Seebauer,et al.  Adsorption/desorption kinetics of H2O on GaAs(100) measured by photoreflectance , 1993 .

[8]  G. D. Watkins.  Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boron , 1975 .

[9]  K. L. Brower.  29Si hyperfine structure of unpaired spins at the Si/SiO2 interface , 1983 .

[10]  Stesmans.  Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The Pb-generation-stress relationship. , 1993, Physical review. B, Condensed matter.

[11]  David E. Aspnes,et al.  Third-derivative modulation spectroscopy with low-field electroreflectance , 1973 .

[12]  F. J. Himpsel,et al.  Microscopic structure of the SiO 2 /Si interface , 1988 .

[13]  David L. Griscom,et al.  Diffusion of radiolytic molecular hydrogen as a mechanism for the post‐irradiation buildup of interface states in SiO2‐on‐Si structures , 1985 .

[14]  James D. Plummer,et al.  Thermal oxidation of silicon in dry oxygen growth-rate enhancement in the thin regime. I: Experimental results , 1985 .

[15]  E. Seebauer,et al.  Semiconductor surface diffusion: Nonthermal effects of photon illumination , 2000 .

[16]  Hans-Joachim L. Gossmann.  Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A. , 1999 .

[17]  T. Greber,et al.  Step-induced one-dimensional surface state on Cu(332) , 2000 .

[18]  Hongen Shen,et al.  Franz–Keldysh oscillations in modulation spectroscopy , 1995 .

[19]  J. Woodall,et al.  Photoreflectance of GaAs and Ga0.82Al0.18As at elevated temperatures up to 600 °C , 1988 .

[20]  Cardona,et al.  Temperature dependence of the dielectric function and interband critical points in silicon. , 1987, Physical review. B, Condensed matter.

[21]  Fred H. Pollak,et al.  Electroreflectance at a Semiconductor-Electrolyte Interface , 1965 .

[22]  A. Stesmans.  Passivation of Pb0 and Pb1 interface defects in thermal (100) Si/SiO2 with molecular hydrogen , 1996 .

[23]  David E. Aspnes,et al.  RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES , 1983 .

[24]  F. G. Allen,et al.  Work Function, Photoelectric Threshold, and Surface States of Atomically Clean Silicon , 1962 .

[25]  K. Chang,et al.  First-principles study of the self-interstitial diffusion mechanism in silicon , 1998 .

[26]  R. Pathak,et al.  Photoreflectance characterization of GaAs as a function of temperature, carrier concentration, and near‐surface electric field , 1993 .

[27]  F. Himpsel,et al.  Determination of the Fermi-level pinning position at Si(111) surfaces , 1983 .

[28]  Scott T. Dunham,et al.  First-Principles Study of Boron Diffusion in Silicon , 1999 .

[29]  Hideyuki Takakura,et al.  Photoreflectance characterization of surface Fermi level in as‐grown GaAs(100) , 1990 .

[30]  J. Woodall,et al.  Photoreflectance study of the surface Fermi level at (001) n‐ and p‐type GaAs surfaces , 1992 .

[31]  L. Schmidt,et al.  The coverage dependence of the pre-exponential factor for desorption , 1988 .

[32]  M. Orrit,et al.  Coherent surface fluorescence versus thermally activated energy transfer to the bulk in the anthracene crystal: Model calculations and some experimental results , 1989 .

[33]  Edmund G Seebauer,et al.  Quantitative extraction of continuous distributions of energy states and pre-exponential factors from thermal desorption spectra , 1994 .

[34]  Chen,et al.  Electrostatic sample-tip interactions in the scanning tunneling microscope. , 1993, Physical review letters.