A new test structure for recombination measurements in thin si layers for VLSI structures

The capability of two recently proposed measurements methods to evaluate recombination properties of thin layers is discussed. Both methods make use of a novel test structure which allows one to evaluate a) the lifetime profile along submicron epilayers and b) the recombination velocity set by a generic heavily doped layer. Measurements performed on 1 μm thick epilayers demonstrate that the recombination lifetime in these layers is not correlated with the doping level and it has values lower than those reported in thicker layers. Moreover, experimental data collected n+ layers of different technology suggest a phonon-assisted lifetime value much lower than that reported in literature for uniformly doped bulk material.

[1]  R. Mertens,et al.  Experimental and theoretical evaluation of boron diffused high-low junctions for BSF solar cells , 1986 .

[2]  J. Hauser,et al.  Minority carrier reflecting properties of semiconductor high-low junctions , 1975 .

[3]  P. Spirito,et al.  A measurement technique to obtain the recombination lifetime profile in epi layers at any injection level , 1987, IEEE Transactions on Electron Devices.

[4]  S. G. Chamberlain,et al.  Modeling and measurement of minority-carrier lifetime versus doping in diffused layers of n+-p silicon diodes , 1982, IEEE Transactions on Electron Devices.

[5]  F. Klaassen.  Device physics of integrated injection logic , 1975, IEEE Transactions on Electron Devices.

[6]  W. N. Grant,et al.  Elimination of latch up in bulk CMOS , 1980, 1980 International Electron Devices Meeting.

[7]  James D. Plummer,et al.  Optimization of silicon bipolar transistors for high current gain at low temperatures , 1988 .

[8]  A. Neugroschel,et al.  Diffusion length and lifetime determination in p-n junction solar cells and diodes by forward-biased capacitance measurements , 1978, IEEE Transactions on Electron Devices.

[9]  P. Spirito,et al.  Measurement of recombination lifetime profiles in epilayers using a conductivity modulation technique , 1985, IEEE Transactions on Electron Devices.

[10]  R. M. Swanson,et al.  Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon , 1985, 1985 International Electron Devices Meeting.

[11]  J. A. del Alamo,et al.  Measuring and modeling minority carrier transport in heavily doped silicon , 1985 .

[12]  S. Bellone,et al.  Measurement of the effective recombination velocity of semiconductor high-low transitions , 1985, IEEE Transactions on Electron Devices.

[13]  D. Yaney,et al.  Alpha particle tracks in silicon and their effect on dynamic MOS RAM reliability , 1978, 1978 International Electron Devices Meeting.