The optical properties of luminescence centres in silicon
暂无分享,去创建一个
[1] L. Beghian,et al. INELASTIC SCATTERING OF NEUTRONS , 1954 .
[2] H. London. The Difference in the Molekular Volume of Isotopes , 1958 .
[3] R. Newman,et al. The diffusivity of carbon in silicon , 1961 .
[4] G. W. Ludwig,et al. Electron Spin Resonance in Semiconductors , 1962 .
[5] D. Mccumber,et al. Linewidth and Temperature Shift of the R Lines in Ruby , 1963 .
[6] P. Baruch. RADIATION DAMAGE IN SEMICONDUCTORS. , 1963 .
[7] H. J. Mcskimin,et al. Elastic Moduli of Silicon vs Hydrostatic Pressure at 25.0°C and − 195.8°C , 1964 .
[8] A. A. Kaplyanskii. Noncubic Centers in Cubic Crystals and Their Piezospectroscopic Investigation , 1964 .
[9] R. Newman,et al. Vibrational absorption of carbon in silicon , 1964 .
[10] D. G. Thomas,et al. Auger Recombination of Excitons Bound to Neutral Donors in Gallium Phosphide and Silicon , 1966 .
[11] I. Haddad,et al. Energy dependence of anisotropy of defect production in electron irradiated diamond‐type crystals , 1966 .
[12] A. Maradudin. Theoretical and Experimental Aspects of the Effects of Point Defects and Disorder on the Vibrations of Crystals—1 , 1966 .
[13] H. D. Barber. Effective mass and intrinsic concentration in silicon , 1967 .
[14] J. Baker,et al. Effect of Carbon on the Lattice Parameter of Silicon , 1968 .
[15] R. Newman,et al. Vibrational absorption of carbon and carbon-oxygen complexes in silicon , 1969 .
[16] L. J. Cheng,et al. 11.6 μ Oxygen‐Associated Absorption Band in Neutron‐Irradiated Silicon , 1969 .
[17] Am Stoneham,et al. Shapes of Inhomogeneously Broadened Resonance Lines in Solids (Invited Talk) , 1969 .
[18] G. Davies. Inhomogeneous broadening of edge recombination radiation , 1970 .
[19] Observation of cyclotron resonance at the split-off valence band in silicon , 1970 .
[20] R. Nahory,et al. Valley-Orbit Splitting of Free Excitons? The Absorption Edge of Si , 1970 .
[21] G. D. Watkins,et al. Radiation effects in semiconductors , 1971 .
[22] R. Newman,et al. The effect of carbon on thermal donor formation in heat treated pulled silicon crystals , 1972 .
[23] Y. Endo,et al. INFRARED SPECTROPHOTOMETRY FOR CARBON IN SILICON AS CALIBRATED BY CHARGED PARTICLE ACTIVATION. , 1972 .
[24] W. D. Compton,et al. Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon , 1973 .
[25] W. D. Compton,et al. Recombination luminescence from electron‐irradiated Li‐diffused Si , 1973 .
[26] R. Newman. Infra-red studies of crystal defects , 1973 .
[27] Y. Hamakawa,et al. Analysis of derivative spectrum of indirect exciton absorption in silicon , 1973 .
[28] L. Eaves,et al. A study of intervalley scattering in n-Si by stress-dependent longitudinal magnetophonon resonance , 1974 .
[29] K. Godwod,et al. Application of a precise double X-ray spectrometer for accurate lattice parameter determination , 1974 .
[30] James R. Chelikowsky,et al. ELECTRONIC STRUCTURE OF SILICON , 1974 .
[31] K. Betzler. Relaxation of Auger-excited carriers in silicon☆ , 1974 .
[32] A. Onton,et al. Temperature dependence of the band gap of silicon , 1974 .
[33] Y. Hamakawa,et al. Direct observation of split-off exciton and phonon structures in absorption spectrum of silicon , 1974 .
[34] E. Heasell,et al. Defect centers in silicon produced by room temperature electron irradiation. I. Optical and photoconductivity studies , 1975 .
[35] T. C. Mcgill,et al. Temperature dependence of silicon luminescence due to splitting of the indirect ground state , 1975 .
[36] A. Stoneham. Theory of defects in solids , 1979 .
[37] C. Kirkpatrick,et al. Photoluminescence from Si irradiated with 1.5‐MeV electrons at 100 °K , 1976 .
[38] G. D. Watkins,et al. EPR Observation of the Isolated Interstitial Carbon Atom in Silicon , 1976 .
[39] R. R. Parsons,et al. Phonon broadening of bound exciton luminescence in silicon , 1976 .
[40] N. O. Lipari,et al. A new method in the theory of indirect excitons in semiconductors , 1976 .
[41] P. Mooney,et al. Carbon interstitial in electron-irradiated silicon☆ , 1977 .
[42] M. Thewalt. Even-parity acceptor excited states in Si from bound exciton two hole transitions , 1977 .
[43] T. Wada,et al. Complex defects introduced into Si by high‐energy electron irradiation: Production rates of defects in n‐Si , 1977 .
[44] A. T. Collins. The use of the Weierstrass sphere geometry in luminescence spectroscopy , 1977 .
[45] M. Thewalt. Details of the structure of bound excitons and bound multiexciton complexes in Si , 1977 .
[46] G. Kirczenow. A shell model of bound multiexciton complexes in silicon , 1977 .
[47] G. Kirczenow. A new model for bound multiexciton complexes , 1977 .
[48] W. Schmid. Auger lifetimes for excitons bound to neutral donors and acceptors in Si , 1977 .
[49] Piezospectroscopic effect on zero-phonon luminescence lines of silicon , 1978 .
[50] M. Tajima. Determination of boron and phosphorus concentration in silicon by photoluminescence analysis , 1978 .
[51] P. Fiorini,et al. Uniaxially stressed silicon: Fine structure of the exciton and deformation potentials , 1978 .
[52] G. A. Thomas,et al. The Electron-Hole Liquid in Semiconductors: Experimental Aspects , 1978 .
[53] M. Thewalt. Photoluminescence studies of bound multiexciton complexes associated with Li in Si , 1978 .
[54] C. S. Wang,et al. Lattice dynamics of Ge and Si using the Born-von Karman model , 1979 .
[55] A. D. Zdetsis. A parallel Born-von Karman study of diamond and the diamond type crystals , 1979 .
[56] On the origin of photoluminescence in heavily-doped silicon , 1979 .
[57] J Walker,et al. Optical absorption and luminescence in diamond , 1979 .
[58] T. C. Mcgill,et al. Observation of long lifetime lines in photoluminescence from Si: In , 1979 .
[59] J. Pankove,et al. Photoluminescence from hydrogenated ion-implanted crystalline silicon , 1979 .
[60] M. Tajima,et al. Photoluminescence analysis of annealed silicon crystals , 1980 .
[61] R. B. Hammond,et al. Temperature dependence of the exciton lifetime in high‐purity silicon , 1980 .
[62] Y. Hamakawa,et al. Luminescence of thermally induced defects in Si crystals , 1981 .
[63] M. Thewalt,et al. Enhancement of long lifetime lines in photoluminescence from Si:In , 1981 .
[64] A. Mudryi,et al. Thermally-Induced Defects in Silicon Containing Oxygen and Carbon , 1981, December 16.
[65] K. O'Donnell,et al. Luminescence excitation in an irradiated solid: Type IIb diamond , 1981 .
[66] Colin E. Jones,et al. Carbon‐acceptor pair centers (X centers) in silicon , 1981 .
[67] M. Thewalt,et al. Photoluminescence in heavily doped Si: B and Si: As , 1981 .
[68] G. Davies. REVIEW ARTICLE: The Jahn-Teller effect and vibronic coupling at deep levels in diamond , 1981 .
[69] R. R. Parsons,et al. Photoluminescence in laser-annealed neutron transmuted silicon: isoelectronic traps , 1981 .
[70] K. Thonke,et al. New model of the irradiation-induced 0.97-eV (G) line in silicon: A C S -Si * complex , 1981 .
[71] K. Elliott. Luminescence of traps in electron-irradiated gallium-doped silicon , 1982 .
[72] A. Kaminskiǐ,et al. Luminescence analysis of group III and V impurities in silicon , 1982 .
[73] R. R. Parsons,et al. Long lifetime photoluminescence from a deep centre in copper-doped silicon , 1982 .
[74] M. Thewalt,et al. Photoluminescence lifetime, absorption and excitation spectroscopy measurements on isoelectronic bound excitons in beryllium-doped silicon , 1982 .
[75] G. D. Watkins,et al. Optical Detection of Magnetic Resonance for a Deep-Level Defect in Silicon , 1982 .
[76] J. Weber,et al. Optical properties of copper in silicon: Excitons bound to isoelectronic copper pairs , 1982 .
[77] M. Tajima. (Invited) Recent Advances in Photoluminescence Analysis of Si: Application to an Epitaxial Layer and Nitrogen in Si , 1982 .
[78] V. V. Bolotov,et al. Kinetics of Accumulation of Radiation Defects and Annihilation of Vacancies and Interstitials in Carbon- and Boron-Containing Silicon , 1982, July 16.
[79] T. C. Mcgill,et al. Photoluminescence of Si-rich Si-Ge alloys , 1982 .
[80] J. R. Patel,et al. Diffusivity of oxygen in silicon at the donor formation temperature , 1983 .
[81] C. P. Foy. Optical studies of vibronic bands in silicon , 1983 .
[82] R. Sauer,et al. Identification of electronic and vibronic states of the deep indium-related defect in quenched Si: In by excitation spectroscopy , 1983 .
[83] E. Weber,et al. Chromium and chromium-boron pairs in silicon , 1983 .
[84] G. D. Watkins,et al. Origin of the 0.97 eV luminescence in irradiated silicon , 1983 .
[85] T. C. Mcgill,et al. Isotope-shift experiments on luminescence attributed to (Fe,B) pairs in silicon , 1983 .
[86] M. Suezawa,et al. The Nature of Photoluminescence from Plastically Deformed Silicon , 1983, August 16.
[87] T. C. Mcgill,et al. Isotope shifts for the P, Q, R lines in indium-doped silicon , 1983 .
[88] G. Oehrlein,et al. The mechanism of the enhancement of divacancy production by oxygen during electron irradiation of silicon. II. Computer modeling , 1983 .
[89] G. D. Watkins,et al. Carbon and oxygen isotope effects in the 0.79 eV defect photoluminescence spectrum in irradiated silicon , 1984 .
[90] G. Armelles,et al. The No‐Phonon Luminescence at 0.793 eV from Si:Au. Uniaxial Stress and Zeeman Spectroscopy Experiments , 1984 .
[91] Jose Menendez,et al. Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and α − S n : Anharmonic effects , 1984 .
[92] M. Thewalt,et al. Lithium and lithium-carbon isoelectronic complexes in silicon: Luminescence-decay-time, absorption, isotope-splitting, and Zeeman measurements , 1984 .
[93] P. Mooney,et al. Defect creation by subthreshold irradiation in semiconductors , 1984 .
[94] M. Thewalt,et al. Photoluminescence lifetimes of the In, Tl and Bi bound excitons in silicon , 1984 .
[95] K. Thonke,et al. Excitation spectroscopy on the 0.79-eV (C) line defect in irradiated silicon , 1984 .
[96] G. Wolstenholme,et al. The production and destruction of the C-related 969 meV absorption band in Si , 1984 .
[97] J. Weber,et al. Photoluminescence of excitons bound to an isoelectronic trap in silicon associated with boron and iron , 1984 .
[98] E. C. Lightowlers,et al. Uniaxial stress measurements on the 1039.8 meV zero-phonon line in irradiated silicon , 1984 .
[99] N. Magnea,et al. Luminescence of carbon and oxygen related complexes in annealed silicon , 1984 .
[100] J. Weber,et al. Vibronic coupling and implications in the copper related 1.014 eV photoluminescence spectrum in silicon , 1984 .
[101] A. Mudryi,et al. Noble Gas Atoms as Chemical Impurities in Silicon , 1984, January 16.
[102] J. Wagner. Photoluminescence and excitation spectroscopy in heavily doped n- and p-type silicon , 1984 .
[103] K. Thonke,et al. New class of related optical defects in silicon implanted with the noble gases He, Ne, Ar, Kr, and Xe , 1984 .
[104] A. Zunger,et al. Breathing-mode relaxation around tetrahedral interstitial 3d impurities in silicon , 1984 .
[105] M. Thewalt,et al. Isoelectronic bound excitons in In- and T1-doped Si: A novel semiconductor defect , 1984 .
[106] B. Monemar,et al. Neutral carbon‐related complex defects and the annealing of thermal donors in p‐type Czochralski silicon , 1985 .
[107] Wagner,et al. Donorlike excited states of the thermally induced 0.767-eV (P line) defect in oxygen-rich silicon. , 1985, Physical review. B, Condensed matter.
[108] Bois,et al. Metastable-defect behavior in silicon: Charge-state-controlled reorientation of iron-aluminum pairs. , 1985, Physical review. B, Condensed matter.
[109] A. Oates,et al. Determination of low levels of carbon in Czochralski silicon , 1985 .
[110] R. A. Frederick,et al. The Effects of Thermal History during Growth on O Precipitation in Czochralski Silicon , 1985 .
[111] M. Thewalt,et al. The far infrared absorption spectra of bound excitons in silicon , 1985 .
[112] M. Thewalt,et al. Uniaxial stress and magnetic field dependence of the In- and Tl-related isoelectronic bound excitons in Si , 1985 .
[113] Hangleiter. Experimental proof of impurity Auger recombination in silicon. , 1985, Physical review letters.
[114] M. Thewalt,et al. Photoluminescence studies of the neutralization of acceptors in silicon by atomic hydrogen , 1985 .
[115] D. Hall,et al. Observation of electroluminescence from excitons bound to isoelectronic impurities in crystalline silicon , 1986 .
[116] Robert J. Davis,et al. Photoluminescence detection of impurities introduced in silicon by dry etching processes , 1986 .
[117] Watkins,et al. Thermal-donor-related isoelectronic center in silicon which can bind up to four excitons. , 1986, Physical review letters.
[118] A. Oates,et al. Involvement of oxygen-vacancy defects in enhancing oxygen diffusion in silicon , 1986 .
[119] B. Svensson,et al. Annealing studies of the 862 cm−1 infrared band in silicon , 1986 .
[120] Kerr,et al. Monovacancy formation enthalpy in silicon. , 1986, Physical review letters.
[121] D. Hall,et al. Optical emission at 1.32 μm from sulfur‐doped crystalline silicon , 1986 .
[122] Antonelli,et al. Analysis of pseudo-Jahn-Teller instability: O, S, and N- in silicon. , 1987, Physical review. B, Condensed matter.
[123] K. Thonke,et al. New photoluminescence defect spectra in silicon irradiated at 100 K: observation of interstitial carbon? , 1987 .
[124] G. D. Watkins,et al. Identification of an interstitial carbon‐interstitial oxygen complex in silicon , 1987 .
[125] D. Hall,et al. Concentration dependence of optical emission from sulfur‐doped crystalline silicon , 1987 .
[126] M. Henry,et al. Bound exciton recombination at Mn-Zn pair centres in silicon , 1987 .
[127] Davies,et al. The 3942-cm-1 optical band in irradiated silicon. , 1987, Physical review. B, Condensed matter.
[128] B. Svensson,et al. Generation of divacancies in tin-doped silicon , 1987 .
[129] Zhao,et al. Impact ionization of excitons and electron-hole droplets in silicon. , 1987, Physical review. B, Condensed matter.
[130] Moses T. Asom,et al. Interstitial Defect Reactions in Silicon , 1987 .
[131] M. Thewalt,et al. A second isoelectronic multiexciton center in annealed Czochralski silicon , 1987 .
[132] Thewalt,et al. Discovery of polyexcitons. , 1987, Physical review letters.
[133] L. W. Song,et al. Identification of a bistable defect in silicon: The carbon interstitial‐carbon substitutional pair , 1987 .
[134] Sauér,et al. Set of five related photoluminescence defects in silicon formed through nitrogen-carbon interactions. , 1987, Physical review. B, Condensed matter.
[135] Sauér,et al. Uniaxial stress study of photoluminescence defects created by noble-gas implantation into silicon. , 1987, Physical review. B, Condensed matter.
[136] Grimmeiss,et al. Further evidence for the C-line pseudodonor model in irradiated Czochralski-grown silicon. , 1988, Physical review. B, Condensed matter.