Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC

Abstract The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 10 16 1 MeV neutron equivalent (n eq ) cm −2 . This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

[1]  V. Eremin,et al.  Gamma radiation induced space charge sign inversion and re-inversion in p-type MCZ Si detectors and in proton-irradiated n-type MCZ Si detectors , 2005 .

[2]  A. Macchiolo,et al.  Comparison of the radiation hardness of Magnetic Czochralski and Epitaxial silicon substrates after 26 MeV proton and reactor neutron irradiation , 2007 .

[3]  A. Candelori.  Radiation-hard detectors for very high luminosity colliders , 2006 .

[4]  M. Reiche,et al.  Processing of ultra thin silicon sensors for future e/sup +/e/sup -/ linear collider experiments , 2003, 2003 IEEE Nuclear Science Symposium. Conference Record (IEEE Cat. No.03CH37515).

[5]  Robert Jeraj,et al.  Research Reactor Benchmarks , 2003 .

[6]  Shaun Roe,et al.  SCTA-a rad-hard BiCMOS analogue readout ASIC for the ATLAS semiconductor tracker , 1996 .

[7]  C. Piemonte,et al.  Charge collection measurements in single-type column 3D sensors , 2007 .

[8]  P. Allport,et al.  Charge collection efficiency measurements for segmented silicon detectors irradiated to 1x1016 n cm−2 , 2007, 2007 IEEE Nuclear Science Symposium Conference Record.

[9]  Maurizio Boscardin,et al.  Laser characterisation of a 3D single-type column p-type prototype module read out with ATLAS SCT electronics , 2007 .

[10]  C. Leroy,et al.  New irradiation zones at the CERN-PS , 1999 .

[11]  F. Ruggiero.  LHC accelerator R&D and upgrade scenarios , 2004 .

[12]  D. Bisello,et al.  Recent advancements in the development of radiation hard semiconductor detectors for S-LHC , 2005 .

[13]  J. Härkönen,et al.  Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons , 2004 .

[14]  P. Luukka.  Recent progress of CERN RD50 Collaboration , 2006 .

[15]  Paul J. Sellin,et al.  New materials for radiation hard semiconductor dectectors , 2006 .

[16]  D. Bortoletto.  Recent results from RD50 , 2006 .

[17]  M. Trimpl,et al.  New results on DEPFET pixel detectors for radiation imaging and high energy particle detection , 2003, 2003 IEEE Nuclear Science Symposium. Conference Record (IEEE Cat. No.03CH37515).

[18]  P. Ciampolini,et al.  Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration , 2001 .

[19]  Maurizio Boscardin,et al.  Development of 3D detectors featuring columnar electrodes of the same doping type , 2005 .

[20]  H. Kagan.  Diamond radiation detectors may be forever , 2005 .

[21]  A. Macchiolo,et al.  Charge collection and capacitance voltage analysis in irradiated n-type magnetic Czochralski silicon detectors , 2007 .

[22]  Pierre Jarron,et al.  3D detectors-state of the art , 2006 .

[23]  Marko Zavrtanik,et al.  Annealing studies of effective trapping times in silicon detectors , 2007 .

[24]  Arie Ruzin,et al.  Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion , 1999 .

[25]  G. Kramberger.  Recent results from CERN RD50 collaboration , 2007 .

[26]  R. Klingenberg,et al.  Free Charge Carriers Trapping Properties in Neutron-Irradiated DOFZ Silicon Pad Detectors , 2007, IEEE Transactions on Nuclear Science.

[27]  G. Lindström,et al.  Radiation damage in silicon detectors , 2003 .

[28]  Maurizio Boscardin,et al.  Fabrication of 3D detectors with columnar electrodes of the same doping type , 2007 .

[29]  P. Allport,et al.  Performance of P-type micro-strip detectors after irradiation to 7.5/spl times/10/sup 15/ p cm/sup 2/ , 2005, IEEE Transactions on Nuclear Science.

[30]  M. Moll.  Radiation Tolerant Semiconductor Sensors for Tracking Detectors , 2006 .

[31]  C. Kenney,et al.  3D — A proposed new architecture for solid-state radiation detectors , 1997 .