Electrical behavior of Au-Ge eutectic solder under aging for solder bump application in high temperature Electronics
暂无分享,去创建一个
Chee Lip Gan | Riko I. Made | F. L. Lau | W. N. Putra | J. Z. Lim | V. C. Nachiappan | J. L. Aw | Jun Long Lim | C. Gan | R. I. Made | F. Lau | J. Aw | W. Putra
[1] E.H. Amalu,et al. High temperature electronics: R&D challenges and trends in materials, packaging and interconnection technology , 2009, 2009 2nd International Conference on Adaptive Science & Technology (ICAST).
[2] R. Wayne Johnson,et al. Packaging Technology for Electronic Applications in Harsh High-Temperature Environments , 2011, IEEE Transactions on Industrial Electronics.
[3] Pooi See Lee,et al. Spontaneous growth and phase transformation of highly conductive nickel germanide nanowires. , 2011, ACS nano.
[4] T. Thornton,et al. Characterization of nickel Germanide thin films for use as contacts to p-channel Germanium MOSFETs , 2005, IEEE Electron Device Letters.
[5] V. Chidambaram,et al. Reliability of Au-Ge and Au-Si Eutectic Solder Alloys for High-Temperature Electronics , 2012, Journal of Electronic Materials.
[6] Guang Zeng,et al. Development of high-temperature solders: Review , 2012, Microelectron. Reliab..
[7] Hoffmann,et al. Grain-boundary resistance in polycrystalline metals. , 1986, Physical review letters.
[8] F. Nemouchi,et al. Simultaneous growth of Ni5Ge3 and NiGe by reaction of Ni film with Ge , 2006 .
[9] S. Chaudhuri,et al. Effect of grain-boundary scattering on the electrical resistivity of indium films , 1976 .
[10] Hiroshi Sato,et al. Improvement in Joint Reliability of SiC Power Devices by a Diffusion Barrier Between Au-Ge Solder and Cu/Ni(P)-Metalized Ceramic Substrates , 2011 .
[11] J. D. Vries. Temperature-dependent resistivity measurements on polycrystalline SiO2-covered thin gold films , 1987 .
[12] F. Patrick McCluskey,et al. High Temperature Electronics , 1997 .
[13] C. Detavernier,et al. Thin film reaction of transition metals with germanium , 2006 .
[14] Q. Hong,et al. Interfacial reaction between a Ni/Ge bilayer and silicon (100) , 1990 .
[15] A. Rockett,et al. Kinetics of Ni/a-Ge bilayer reactions , 1994 .