论文信息 - A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal

A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal

We demonstrate efficient wavelength tuning by means of hydrostatic pressure of an InGaN/GaN laser diode grown on bulk GaN crystal. Energy shifts of the emitted light with pressure have been found to be about 36 meV/GPa, which are high magnitudes for nitride-based device structures. This result is interpreted as being indicative of efficient screening of built-in electric fields in the studied device. Furthermore, the threshold current of the laser diode was found to be independent of applied pressure. The high magnitude of the pressure coefficient allowed for the achievement of a laser tuning range of up to 10 nm in the blue/violet region, using compact pressure equipment.

[1] F. Kish,et al. Effect of indirect minima carrier population on the output characteristics of AlGaInP light-emitting diodes , 1999 .

[2] S. Denbaars,et al. Dominant role of the piezoelectric field in the pressure behavior of InGaN/GaN quantum wells , 2001 .

[3] C. Menoni,et al. Nonlinear polarization in nitrides revealed with hydrostatic pressure , 2003 .

[4] Eugene E. Haller,et al. Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys , 2003 .

[5] Eugene E. Haller,et al. Unusual properties of the fundamental band gap of InN , 2002 .

[6] S. Tomić,et al. Unusual increase of the Auger recombination current in 1.3 μm GaInNAs quantum-well lasers under high pressure , 2003 .

[7] M. Boćkowski,et al. short note: Blue Laser on High N_2 Pressure-Grown Bulk GaN , 2001 .

[8] William Paul,et al. High Pressure Semiconductor Physics , 2015 .

[9] P. Adamiec,et al. Effect of pressure and temperature on AlGaInP and AlGaAs laser diodes , 2003, SPIE OPTO.

[10] High pressure measurements on visible spectrum AlxGa1−xAs heterostructure lasers: 7100–6750‐Å 300‐K operation , 1982 .

[11] A. Di Carlo,et al. Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures , 1999 .