论文信息 - Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

AlGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown by metalorganic chemical vapor deposition. A threshold current density at 16.5 °C and a characteristic temperature T0 of 4.9 kA/cm2 and 179 K respectively have been obtained for the diode on Si substrate.

[1] M. Akiyama,et al. Growth of GaAs on Si by MOVCD , 1984 .

[2] T. H. Windhorn,et al. AlGaAs double‐heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate , 1984 .

[3] Tetsuo Soga,et al. AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD , 1985 .

[4] M. Umeno,et al. Characterization of epitaxially grown GaAs on Si substrates with III‐V compounds intermediate layers by metalorganic chemical vapor deposition , 1985 .

[5] T. H. Windhorn,et al. Room‐temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate , 1985 .