论文信息 - A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications - 字舞流文

A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications

S. R. Kalva | P. Murugapandiyan | Y. Tarauni | Mohd Wasim | A. Fletcher | V. Rajyalakshmi | B. A. Princy