A 45-GHz SiGe HBT amplifier at greater than 25 % efficiency and 30 mW output power

An efficient power amplifier (PA) is demonstrated in a 0.12-µm silicon germanium (SiGe) BiCMOS process at 45 GHz. The amplifier is a single stage common-emitter amplifier (CE). The voltage handling capability of the amplifier is extended by a low impedance biasing network. The amplifier achieves a peak power-added efficiency (PAE) of 25 % at an output power of 13 dBm in linear operation and 31% in class B mode at an output power of 13.3 dBm. The maximum saturated output power Psat is 14.8 dBm, at which the circuit consumes 77 mW. The chip occupies an area of 0.27 mm2 including pads.

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