Dual-band applicable CMOS PA with a switched inductor for 802.16e WiMAX application

A 2.3/3.5 GHz dual-band applicable CMOS power amplifier (PA) is implemented using 0.13-μm CMOS process.To achieve the optimal dual-band characteristics, a switched inductor is used for the driver amplifier (DA) load. To improve the PAE and linearity at back off power, class AB-B combined PA transistor cell is used. The measured maximum output power Psat of the dual-band PA is about 29 dBm and 28 dBm at 2.3 GHz and 3.5 GHz, respectively. The achieved EVM is −30 dB and −26 dB at 23 dBm output power for each band, respectively. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2799–2802, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26437