论文信息 - Threshold voltage controlled 0.1-/spl mu/m MOSFET utilizing inversion layer as extreme shallow source/drain

Threshold voltage controlled 0.1-/spl mu/m MOSFET utilizing inversion layer as extreme shallow source/drain

MOSFETs containing sub-gates as sidewall spacers of the main gate are fabricated. The inversion layers induced in these MOSFETs by the sub-gates are used as source and drain, in order to investigate how the extremely shallow junction affects the short channel characteristics of MOSFETs. Significant improvement in the short channel characteristics is observed in comparison with conventional MOSFETs whose junctions are formed by ion implantation. These new MOSFETs do not show threshold voltage roll-off at the defined gate length around 0.1 /spl mu/m, and punchthrough is not observed down to 0.07 /spl mu/m.<<ETX>>

F. Murai | H. Noda | S. Kimura

[1] J. Warnock,et al. A High Performance 0.25/spl mu/m CMOS , 1993, Symposium 1993 on VLSI Technology.

[2] Digh Hisamoto,et al. A 0.1 mu m-gate elevated source and drain MOSFET fabricated by phase-shifted lithography , 1991, International Electron Devices Meeting 1991 [Technical Digest].

[3] A. A. Bright,et al. A metal‐oxide‐semiconductor field‐effect transistor with a 20‐nm channel length , 1990 .

[4] R. F. Motta,et al. A new method to determine MOSFET channel length , 1980, IEEE Electron Device Letters.

[5] Shinichiro Kimura,et al. Significance of Charge Sharing in Causing Threshold Voltage Roll-Off in Highly Doped 0.1-μm Si MOSFETs and Its Suppression by Atomic Layer Doping(ALD) , 1993 .