Single-Event Effects in a W-Band (75-110 GHz) Radar Down-Conversion Mixer Implemented in 90 nm, 300 GHz SiGe HBT Technology

This paper investigates single-event effects in a W-Band (75-110 GHz) SiGe HBT down-conversion mixer intended for use in a space-based remote sensing radar system. Transient pulse propagation to the output of the mixer as a linear time variant system is analyzed theoretically. This study facilitates the understanding of transient propagation in RF receivers. Device- and circuit-level simulations were conducted to verify the results of the proposed theory. A two photon absorption laser was used to induce transients on different SiGe HBTs within the circuit to assess the impact of SETs on performance. This study shows that significant transients can be produced at the output of the mixer, which can potentially corrupt the received data or received pulse of the radar. It is shown that a differential double-balanced structure can effectively eliminate some of the transients at the output of the mixer. To the authors' best knowledge this is the first study of single event transients conducted on a millimeter-wave SiGe circuit.

[1]  Chau-Ching Chiong,et al.  A $W$ -band High LO-to-RF Isolation Triple Cascode Mixer With Wide IF Bandwidth , 2014, IEEE Transactions on Microwave Theory and Techniques.

[2]  R. Reed,et al.  Single event effects in circuit-hardened SiGe HBT logic at gigabit per second data rates , 2000 .

[3]  John D. Cressler,et al.  Establishing best-practice modeling approaches for understanding single-event transients in Gb/s SiGe digital logic , 2011, 2011 12th European Conference on Radiation and Its Effects on Components and Systems.

[4]  C. Poivey,et al.  Comparison of single-event transients induced in an operational amplifier (LM124) by pulsed laser light and a broad beam of heavy ions , 2004, IEEE Transactions on Nuclear Science.

[5]  John D. Cressler,et al.  Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs , 2014, IEEE Transactions on Nuclear Science.

[6]  T. Adam,et al.  SiGe HBTs for millimeter-wave applications with simultaneously optimized f/sub T/ and f/sub max/ of 300 GHz , 2004, 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers.

[7]  Xueyang Geng,et al.  A new approach to designing electronic systems for operation in extreme environments: Part I - The SiGe Remote Sensor Interface , 2012, IEEE Aerospace and Electronic Systems Magazine.

[8]  J. C. Pickel,et al.  Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-/spl mu/m SiGe heterojunction bipolar transistors and circuits , 2003 .

[9]  Bongim Jun,et al.  An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs , 2006, IEEE Transactions on Nuclear Science.

[10]  J. Cressler.  SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications , 1998 .

[11]  John D. Cressler,et al.  On the Potential of SiGe HBTs for Extreme Environment Electronics , 2005, Proceedings of the IEEE.

[12]  John D. Cressler,et al.  Impact of Total Ionizing Dose on a 4th Generation, 90 nm SiGe HBT Gaussian Pulse Generator , 2014, IEEE Transactions on Nuclear Science.

[13]  D. S. Walsh,et al.  Comparison of SETs in bipolar linear circuits generated with an ion microbeam, laser light, and circuit simulation , 2002 .

[14]  R. Pease,et al.  Subbandgap laser-induced single event effects: carrier generation via two-photon absorption , 2002 .

[15]  John D. Cressler,et al.  Radiation Effects in SiGe Technology , 2013, IEEE Transactions on Nuclear Science.

[16]  J. Long,et al.  A 7dB NF 60GHz-band millimeter-wave transconductance mixer , 2011, 2011 IEEE Radio Frequency Integrated Circuits Symposium.

[17]  Gyorgy Vizkelethy,et al.  Design of Digital Circuits Using Inverse-Mode Cascode SiGe HBTs for Single Event Upset Mitigation , 2010, IEEE Transactions on Nuclear Science.

[18]  R. Reed,et al.  Proton radiation response of SiGe HBT analog and RF circuits and passives , 2001 .

[19]  G.M. Rebeiz,et al.  A 77 GHz SiGe sub-harmonic balanced mixer , 2005, IEEE Journal of Solid-State Circuits.

[20]  M. Turowski,et al.  Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs , 2009, IEEE Transactions on Nuclear Science.

[21]  David M. Fleischhauer,et al.  Evaluating the Effects of Single Event Transients in FET-Based Single-Pole Double-Throw RF Switches , 2014, IEEE Transactions on Nuclear Science.

[22]  Prabir Saha,et al.  A Theory of Single-Event Transient Response in Cross-Coupled Negative Resistance Oscillators , 2010, IEEE Transactions on Nuclear Science.

[23]  M. Bellini,et al.  Proton Tolerance of SiGe Precision Voltage References for Extreme Temperature Range Electronics , 2006, IEEE Transactions on Nuclear Science.

[24]  Yann Deval,et al.  Investigation of single-event transients in voltage-controlled oscillators , 2003 .