Electrical properties of platinum in silicon

The energy levels produced by platinum in silicon have been measured in p‐ and n‐type material using deep‐level transient spectroscopy and constant‐capacitance thermal‐emission‐rate measurements. Within the sensitivity of the apparatus only two levels have been detected having thermal‐emission activation energies of EC−ET=0.231 eV and ET−EV=0.321 eV. The majority‐carrier capture cross sections of these levels have also been measured, giving σnA =7×10−15 cm2 and σpD=1.5×10−15 exp(−7.3 ×10−3/kT). Using these values together with thermal‐emission data and assumed degeneracy factors of gA=0.5 and gD=2 in the equation of detailed balance, it was concluded that both levels were fixed to the conduction band edge.

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