A highly reliable self-planarizing low-k intermetal dielectric for sub-quarter micron interconnects

In this paper we present a highly reliable IMD process using a new CVD chemistry. The key to the process is a unique gas chemistry of methylsilane and hydrogen peroxide, resulting in excellent gapfill and planarity with low-k of 2.75. Via-chain resistances using this process are just as low and stable as those using inorganic IMDs. This is likely attributable to the smaller amount of water outgassing with this process.