Theory of the InP shallow homojunction solar cell

Abstract Based on a parametric variation study using a fairly comprehensive model, we have arrived at a near-optimum design of the shallow homojunction InP solar cell. Our results predict that using long lifetime material, an optimized front contact design, a two-layer antireflection coating and the other geometrical and material parameters of our near-optimum design, a beginning-of-life total area efficiency of 22% or slightly higher is realistically achievable under AM 0, 25 °C. Using a lifetime damage coefficient obtained by curve-fitting our model to measured illuminated current-voltage curves at beginning-of-life and at several 1 MeV electron fluences, on two InP cells, we predict a degradation of roughly 10% in efficiency after irradiation with a fluence of 1015 1 MeV electrons cm−2 for the optimally designed cell. The paper also attempts to explain the reasons for the superior radiation tolerance of the InP cell compared with that of silicon and GaAs solar cells.

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