Design of an ultra-wideband low noise amplifier in 0.13 /spl mu/m CMOS

A low noise amplifier (LNA) in 0.13 /spl mu/m CMOS for ultra-wideband (UWB) front-ends is presented. The LNA has a peak gain of 11.3 dB and a 3.0-10.7 GHz -3 dB bandwidth. Its broadband matching is better than -10 dB for S11 and -15 dB for S22. Its lowest noise figure (NF) is 2.2 dB and the average NF is 3 dB. The LNA achieves NF/sub min/ performance over the entire bandwidth by using a power-constrained simultaneous noise and input matching concept. It consumes only 4.8 mW with a 1.2 V supply for the amplifier core and 1.6 mW in the output buffer. A comparison with recently published UWB LNAs shows this design has the best overall performance among both CMOS and SiGe designs.

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