Concept of the CW GaN-based VECSEL

A concept and numerical study of a continuous-wave (CW) nitride-based vertical-external-cavity surface-emitting laser (VECSEL) with an InGaN/GaN active region is presented. The structure is designed to generate radiation around 450 nm. An array of nitride-based continuous-wave laser diodes is proposed to pump directly the quantum wells in the active region. We expect that it enables CW operation of the presented laser, in contrast to the GaN-based VECSELs demonstrated so far. Moreover, employing in-well pumping instead of barrier pumping reduces pump-laser quantum defect, which contributes to better thermal properties of the device. An external efficiency as high as 26% can be theoretically achieved by using a special multi-pass pump setup.

[1]  Si-Hyun Park,et al.  Microchip-Type InGaN Vertical External-Cavity Surface-Emitting Laser , 2006 .

[2]  Z. R. Wasilewski,et al.  Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy , 2011 .

[3]  Songxin Gao,et al.  Optimization of beam transformation system for laser-diode bars. , 2016, Optics express.

[4]  Shun Lien Chuang,et al.  Physics of Photonic Devices , 2009 .

[5]  Hadis Morkoç,et al.  Nitride Semiconductor Devices: Fundamentals and Applications , 2013 .

[6]  J. Carlin,et al.  In-depth analysis of injection-seeded long external cavity InGaN/GaN surface-emitting laser , 2013 .

[7]  Vincenzo Fiorentini,et al.  Spontaneous versus Piezoelectric Polarization in III–V Nitrides: Conceptual Aspects and Practical Consequences , 1999 .

[8]  Thomas Graf,et al.  Schemes for efficient QW pumping of AlGaInP disk lasers , 2017, LASE.

[9]  R. Sarzała,et al.  Influence of Pumping Beam Width on Vecsel Output Power , 2014 .

[10]  Nobuyasu Suzuki,et al.  10-W CW blue-violet diode laser array on the micro-channel cooler , 2012, Photonics West - Lasers and Applications in Science and Engineering.

[11]  Jerry R. Meyer,et al.  Band parameters for nitrogen-containing semiconductors , 2003 .

[12]  Katsuya Samonji,et al.  6.3W InGaN laser diode array with highly efficient wide-striped emitters , 2011, IEEE Photonic Society 24th Annual Meeting.

[13]  Klaus Kirch,et al.  Thin-disk laser pump schemes for large number of passes and moderate pump source quality. , 2015, Applied optics.

[14]  Thomas Graf,et al.  2.5 W continuous wave output at 665 nm from a multipass and quantum-well-pumped AlGaInP vertical-external-cavity surface-emitting laser. , 2016, Optics letters.

[15]  Jerry R. Meyer,et al.  Electron Bandstructure Parameters , 2007 .

[16]  Takahiro Numai.  Fundamentals of semiconductor lasers , 2004 .

[17]  Michael Wraback,et al.  In-well pumping of InGaN/GaN vertical-external-cavity surface-emitting lasers , 2011 .