Study and characterization of a new MOSFET voltage controlled negative resistance for super selective IC tank circuits

MOSFET transistors may be fabricated with a variety of gate geometries. The trapezoidal shape provides a new one of interest. If this non-standard geometry is made dependent on the biasing condition, original behaviour and new I-V characteristics are expected to be obtained. This paper presents a study and characterization of this new device and shows that it provides a voltage controlled negative resistance. It is seen to have many noticeable advantages over existing devices. This new negative resistance should find a wide areas of application in communications, measurements and instrumentation. It can be used to build up super selective tank circuits which can be entirely integrated using MOSFET technology.