Development of micromechanical resonators using a new process flow based upon SOI technology

We report a new process flow and preliminary characterizations of single crystal silicon capacitive resonators operating in the high frequency (HF) range. A 84 µm long, 10 µm wide and 5 µm thick beam resonator fabricated on SOI substrates using the newly developed process flow in our clean room exhibited 5.4 MHz natural frequency with a quality factor of 130 at room temperature in air.

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