Growth of abrupt Ge layers in Si (100)
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[1] Tromp,et al. Structural perfection of the Si(111)-(1 x 1) As surface. , 1988, Physical review. B, Condensed matter.
[2] Kobayashi,et al. Epitaxial growth of GexSi , 1988, Physical review. B, Condensed matter.
[3] S. Iyer,et al. Detection and characterization of individual Ge layers in Si(100) using Raman spectroscopy , 1987 .
[4] Y. Bando,et al. Reflection High-Energy Electron Diffraction Intensity Oscillations during GexSi1-x MBE Growth on Si(001) Substrates , 1987 .
[5] Pearsall,et al. Structurally induced optical transitions in Ge-Si superlattices. , 1987, Physical review letters.
[6] Ruppert,et al. Raman scattering study of amorphous Si-Ge interfaces. , 1985, Physical review. B, Condensed matter.
[7] J. Tsang,et al. Raman spectroscopy of surface layers on crystalline silicon , 1985 .
[8] Wolf,et al. Strain-induced two-dimensional electron gas in selectively doped Si/SixGe1-x superlattices. , 1985, Physical review letters.
[9] E. Granneman,et al. A new UHV system for channeling/blocking analysis of solid surfaces and interfaces , 1984 .
[10] F. G. Allen,et al. Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxy , 1981 .