Annealing of Proton-Induced Random Telegraph Signal in CCDs

A silicon CCD imager has been irradiated with 10 MeV protons and measurements focused on random telegraph signal (RTS). A variance detection method is applied for quantifying the number of RTS after irradiation and through isochronal annealing. The observed behavior is analyzed and corresponds to the annealing of phosphorus-vacancies.

[1]  G. D. Watkins,et al.  Metastable defects in silicon: hints for DX and EL2? , 1991 .

[2]  B. C. Passenheim,et al.  Experimental Evaluation Of High Speed Ccd Imager Radiation Effects Using Co60 And Proton Radiation , 1993, 1993 IEEE Radiation Effects Data Workshop.

[3]  G. D. Watkins.  Intrinsic defects in silicon , 2000 .

[4]  G. R. Hopkinson,et al.  Proton damage effects on p-channel CCDs , 1999 .

[5]  B. Dierickx,et al.  Random telegraph signals in a radiation-hardened CMOS active pixel sensor , 2002 .

[6]  Paul W. Marshall,et al.  CCD Radiation Effects and Test Issues for Satellite Designers , 2003 .

[7]  A. Chantre,et al.  Introduction to defect bistability , 1989 .

[8]  J.P. Spratt,et al.  The effects of nuclear radiation on P-channel CCD imagers , 1997, 1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference.

[9]  G. R. Hopkinson,et al.  Further measurements of random telegraph signals in proton irradiated CCDs , 1995 .

[10]  Andrew D. Holland,et al.  Random telegraph signals in charge coupled devices , 2004 .

[11]  C. Dyer.  Space Radiation Effects For Future Technologies and Missions by : Professor , 2007 .

[12]  A. Mohammadzadeh,et al.  Comparison of CCD damage due to 10- and 60-MeV protons , 2003 .

[13]  G. R. Hopkinson,et al.  Random telegraph signals from proton-irradiated CCDs , 1993 .

[14]  G. Hopkinson.  Proton-induced changes in CTE for n-channel CCDs and the effect on star tracker performance , 2000 .

[15]  A. Meygret,et al.  Displacement damage effects in InGaAs detectors: experimental results and semi-empirical model prediction , 2000 .

[16]  O. Gilard,et al.  Measurements of Random Telegraph Signal in CCDs Irradiated with Protons and Neutrons , 2005, 2005 8th European Conference on Radiation and Its Effects on Components and Systems.

[17]  G. D. Watkins,et al.  Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-E Center , 1964 .

[18]  L. Kimerling,et al.  Annealing of Electron-Irradiated n-Type Silicon. I. Donor Concentration Dependence , 1971 .

[19]  G. Hopkinson.  Radiation effects in a CMOS active pixel sensor , 2000 .