High‐temperature kinetics of some Si‐ and Cl‐containing ceramic precursors

This article summarizes our recent experimental investigations of high-temperature kinetics of Si- and Cl-containing precursor molecules relevant to chemical vapor synthesis and ceramic processing. Reaction systems using SiCl4 and SiHCl3 highly diluted in argon, which were studied in a shock tube using the combination of thermal pyrolysis and laser flash photolysis methods, are described. In situ concentrations of the atomic species Si, Cl, and H were measured simultaneously using the atomic resonance absorption spectroscopy. The measured properties were sensitive to a limited number of elementary reactions, which could be analyzed in terms of rate coefficients. © 2001 John Wiley & Sons, Inc. Int J Chem Kinet 33: 741–754, 2001

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