Mechanism of localized electrical conduction at the onset of electroforming in TiO2 based resistive switching devices

The onset of localized current conduction during electroforming of TiO2-based resistive switching devices is investigated using a pulsed voltage method. The temperature rise at electroforming onset is found to vary from 25 to 300 °C as the pulse amplitude and the width are varied between 3–8 V and 10 ns–100 ms, respectively. The effective activation energy of the forming event is strongly electric field dependent and decreases from 0.7 eV at 3 V to almost zero at 8 V. The functional form of this dependence points toward charge trapping as the mechanism rather than oxygen vacancy motion.

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