论文信息 - Synchrotron‐radiation‐induced surface nitridation of silicon at room temperature

Synchrotron‐radiation‐induced surface nitridation of silicon at room temperature

We demonstrate that unmonochromatized synchrotron radiation stimulates the formation of surface‐reacted nitride species on silicon at room temperature. The experimental evidence was obtained by exposing a NH3‐covered Si(111) surface to synchrotron radiation. This class of phenomena is relevant for the manufacturing technology of submicron electronic devices.

[1] Avouris,et al. Reaction of Si(100) with NH3: Rate-limiting steps and reactivity enhancement via electronic excitation. , 1986, Physical review letters.

[2] D. Menzel. Methods of experimental physics, vol. 22, solid state physics: Surfaces: Edited by R. L. Park and M. G. Lagally. Academic Press, Orlando, 1985. 543 pp., $80.00 , 1986 .

[3] Alan D. Wilson,et al. X-Ray Lithography: Can It Be Justified , 1985, Advanced Lithography.

[4] C. Maillot,et al. Thermal nitridation of silicon: An XPS and LEED investigation , 1984 .

[5] G. Margaritondo,et al. Modification of the germanium oxidation process by aluminum adatoms , 1982 .