Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs

[1]  M. Meneghini,et al.  Trap-state mapping to model GaN transistors dynamic performance , 2022, Scientific Reports.

[2]  S. Decoutere,et al.  TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs , 2022, IEEE Transactions on Electron Devices.

[3]  H. Sugiyama,et al.  A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors , 2021, Scientific reports.

[4]  G. Verzellesi,et al.  GaN-based power devices: Physics, reliability, and perspectives , 2021, Journal of Applied Physics.

[5]  M. Meneghini,et al.  A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs , 2021, IEEE Electron Device Letters.

[6]  Gaudenzio Meneghesso,et al.  Vertical stack reliability of GaN-on-Si buffers for low-voltage applications , 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

[7]  J. Cluzel,et al.  Carbon-related pBTI degradation mechanisms in GaN-on-Si E-mode MOSc-HEMT , 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

[8]  M. Meneghini,et al.  Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs , 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

[9]  M. Meneghini,et al.  Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors , 2018, IEEE Transactions on Electron Devices.

[10]  Baoshun Zhang,et al.  Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors , 2018, Applied Physics Letters.

[11]  Giuseppe Iannaccone,et al.  Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs , 2018, IEEE Transactions on Electron Devices.

[12]  Tibor Grasser,et al.  Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs , 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

[13]  M. Meneghini,et al.  Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements , 2013, IEEE Transactions on Electron Devices.

[14]  B. Kaczer,et al.  Analytic modeling of the bias temperature instability using capture/emission time maps , 2011, 2011 International Electron Devices Meeting.

[15]  H. Ishida,et al.  Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation , 2007, IEEE Transactions on Electron Devices.

[16]  Niels Posthuma,et al.  Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors , 2018, IEEE Transactions on Electron Devices.

[17]  T. Grasser The Capture/Emission Time Map Approach to the Bias Temperature Instability , 2014 .