Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
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S. Decoutere | A. Neviani | G. Meneghesso | N. Posthuma | C. de Santi | A. Benato | M. Borga | B. Bakeroot | N. Modolo | M. Buffolo | M. Fregolent | F. Masin | M. Meneghini | E. Zanoni | D. Vogrig | A. Bettini
[1] M. Meneghini,et al. Trap-state mapping to model GaN transistors dynamic performance , 2022, Scientific Reports.
[2] S. Decoutere,et al. TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs , 2022, IEEE Transactions on Electron Devices.
[3] H. Sugiyama,et al. A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors , 2021, Scientific reports.
[4] G. Verzellesi,et al. GaN-based power devices: Physics, reliability, and perspectives , 2021, Journal of Applied Physics.
[5] M. Meneghini,et al. A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs , 2021, IEEE Electron Device Letters.
[6] Gaudenzio Meneghesso,et al. Vertical stack reliability of GaN-on-Si buffers for low-voltage applications , 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).
[7] J. Cluzel,et al. Carbon-related pBTI degradation mechanisms in GaN-on-Si E-mode MOSc-HEMT , 2020, 2020 IEEE International Electron Devices Meeting (IEDM).
[8] M. Meneghini,et al. Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs , 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
[9] M. Meneghini,et al. Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors , 2018, IEEE Transactions on Electron Devices.
[10] Baoshun Zhang,et al. Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors , 2018, Applied Physics Letters.
[11] Giuseppe Iannaccone,et al. Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs , 2018, IEEE Transactions on Electron Devices.
[12] Tibor Grasser,et al. Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs , 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).
[13] M. Meneghini,et al. Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements , 2013, IEEE Transactions on Electron Devices.
[14] B. Kaczer,et al. Analytic modeling of the bias temperature instability using capture/emission time maps , 2011, 2011 International Electron Devices Meeting.
[15] H. Ishida,et al. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation , 2007, IEEE Transactions on Electron Devices.
[16] Niels Posthuma,et al. Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors , 2018, IEEE Transactions on Electron Devices.
[17] T. Grasser. The Capture/Emission Time Map Approach to the Bias Temperature Instability , 2014 .