GaN vertical n‐p junctions prepared by Si ion implantation

We report on n-p junctions formed on p/p+ GaN layers by silicon ion-implantation. Post-implantation damage removal was performed by annealing at 1260 °C in N2/NH3 ambient. Rectifying behaviour observed in current-voltage measurements was associated with the n-p junctions formed by ion-implantation. In circular devices with a vertical n-p junction topology, light emission under forward bias conditions was observed as a ring near the periphery of the n-contact region, confirming the existence of an electrically active n-p junction. The electrical-characteristics of the n-p diodes does not seem to be limited by the quality of the implanted junction but rather by the high spreading resistance of the underlying p+ contact layer, for which activation was incomplete. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)