706-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy

GaAs TUNNET diodes with 75-nm thick undoped transit-time layer and 14-nm thick n+ electric-field-inducing layer, fabricated with molecular layer epitaxy, were oscillating in fundamental-mode, metal, rectangular WR-1.0 (0.254 × 0.127 mm) resonant cavities at 706 GHz. The continuous wave output power was -67 dBm, at the bias current of 600 mA. The frequency range of continuous wave fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy extends from 60 GHz (+13 dBm) to 706 GHz. Modulation experiments of lower frequency, 86-GHz and 163-GHz, TUNNETTs have shown that TUNNETTs are suitable for broadband communication and other systems at the modulation rate exceeding 2 Gbps. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)