论文信息 - Charge-based deep-level transient spectroscopy of poly(p phenylenevinylene) light-emitting diodes

Charge-based deep-level transient spectroscopy of poly(p phenylenevinylene) light-emitting diodes

Charge based deep level transient spectroscopy (Q-DLTS) has been used to investigate the defect states of poly (p phenylene vinylene)(PPV) light emitting diodes. Studies in the temperature range 250-315K show the presence of two carrier trapping centers in the polymer bulk: a majority carrier trap at 0.5 eV with a cross section of 10-16cm2 and a minority carrier trap at 0.4eV with a cross section of 10-19cm2. The results are compared and discussed with those previously reported in PPV based diodes using other techniques to determine the trap parameters in the polymer.

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