论文信息 - Pseudomorphic power HEMT with 53.5% power-added efficiency for 1.9-GHz PHS standards

Pseudomorphic power HEMT with 53.5% power-added efficiency for 1.9-GHz PHS standards

We demonstrate a power-added efficiency of 53.5% at a very low idling current of 13 mA with a drain bias of 3 V in a proposed power amplifier. This amplifier meets the standards for the 1.9 GHz Japanese Personal Handy-phone System (PHS) which requires highly linear amplifiers, and this is the highest power-added efficiency and the lowest idling current so far reported. The proposed power amplifier uses a pseudomorphic high electron mobility transistor (PHEMT) which provides high transconductance, high linearity, and low idling current operation. This PHEMT was fabricated by using advanced power-device technology: the GaAs-InGaAs-GaAs PHEMT structure has a 0.35 /spl mu/m gate made using phase-shifting lithography and a high In mole ratio (0.35) InGaAs channel.

[1] M. Muraguchi,et al. A 1.9 GHz-band ultra low power consumption amplifier chip set for personal communications , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.

[2] S. Makioka,et al. A high efficiency GaAs MCM power amplifier for 1.9 GHz digital cordless telephones , 1994 .

[3] S. Shanfield,et al. Large periphery, high power pseudomorphic HEMTs , 1993, 15th Annual GaAs IC Symposium.

[4] Masakatsu Mihara,et al. A Refractory WNx/W Self-Aligned Gate GaAs Power MESFET for 1.9-GHz Digital Mobile Communication System Operating with a Single Low Voltage Supply , 1993 .

[5] H. Ichikawa,et al. 2 V-operation pseudomorphic power HEMT with 62% power-added efficiency for cellular phones , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[6] Osamu Ishikawa,et al. High efficiency, low adjacent channel leakage GaAs power MMIC for digital cordless telephone , 1994, Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium.

[7] Highly strained InGaAs layers on GaAs grown by molecular beam epitaxy for high electron mobility transistors , 1995 .