NGCPV: a new Generation of concentrator photovoltaic cells, modules and systems
暂无分享,去创建一个
I. Luque-Heredia | Mathieu Baudrit | Carlos Algora del Valle | Gerald Siefer | C. Cancro | Kenji Araki | Andreas W. Bett | A. Datas | K. Lackner | Juan Carlos Miñano Dominguez | Pablo Benitez Gimenez | Kensuke Nishioka | Hidetoshi Suzuki | Ana Belén Cristóbal López | Antonio Martí Vega | Tatsuya Takamoto | Gabriel Sala Pano | Atsushi Fukuyama | Minako Sugiyama | F. Roca | S. P. Philipps | Masafumi Yamaguchi | Nicholas J. Ekins-Daukes | Antonio Luque López | Ignacio Antón | Y. Hishikawa | M. Niemeyer | Werner Warmuth | Yoshitaka Okada | N. Kuze | Y. Moriyasu | Takashi Kita | Akira Kotagiri | N. Kojima
[1] Yoshiaki Nakano,et al. Open-circuit-voltage enhancement of the III-V super-lattice solar cells under optical concentration , 2012 .
[2] C. D. Farmer,et al. Production of photocurrent due to intermediate-to-conduction-band transitions: a demonstration of a key operating principle of the intermediate-band solar cell. , 2006, Physical review letters.
[3] Masafumi Yamaguchi,et al. Capacitance―voltage and current―voltage characteristics for the study of high background doping and conduction mechanisms in GaAsN grown by chemical beam epitaxy , 2013 .
[4] Y. Ohshita,et al. Analysis of current transport mechanisms in GaAsN homojunction solar cell grown by chemical beam epitaxy , 2013, 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2.
[5] Juan Carlos Miñano,et al. Photovoltaic performance of the dome-shaped Fresnel-Köhler concentrator , 2012, Other Conferences.
[6] Nobuaki Kojima,et al. Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy , 2011 .
[7] A. Luque,et al. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels , 1997 .
[8] João Mendes-Lopes,et al. The dome-shaped Fresnel-Köhler concentrator , 2012 .
[9] H. Yuen,et al. High-efficiency multijunction solar cells employing dilute nitrides , 2012 .
[10] Gerald Siefer,et al. Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight , 2009 .
[11] Masafumi Yamaguchi,et al. Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy , 2011 .
[12] Atsuhiko Fukuyama,et al. Reduction of rotational twin formation by indium pre-evaporation in epitaxially grown GaAs films on Si (111) substrate , 2013 .
[13] Nicholas J. Ekins-Daukes,et al. Dual-junction solar cells with multiple-quantum-well top cells , 2013 .
[14] Juan C. Miñano,et al. Experimental confirmation of FK concentrator insensitivity to chromatic aberrations , 2013 .
[15] Atsuhiko Fukuyama,et al. Nitrogen Related Deep Levels in GaAsN Films Investigated by a Temperature Dependence of Piezoelectric Photothermal Signal , 2012 .
[16] Julio Chaves,et al. Triple-junction solar cell performance under Fresnel-based concentrators taking into account chromatic aberration and off-axis operation , 2012 .
[17] Antonio Luque,et al. High efficiency and high concentration in photovoltaics , 1999 .
[18] Yoshitaka Okada,et al. High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy , 2012 .
[19] Kenji Araki,et al. Detailed effects of wind on the field performance of a 50 kW CPV demonstration plant , 2013 .
[20] Yoshitaka Okada,et al. Effect of concentration on the performance of quantum dot intermediate-band solar cells , 2012 .
[21] Ben J. Stevens,et al. Controlling radiative loss in quantum well solar cells , 2013 .
[22] Antonio Luque,et al. Will we exceed 50% efficiency in photovoltaics? , 2011 .
[23] Yoshitaka Okada,et al. InGaAs quantum dot solar cells with high energygap matrix layers , 2013, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).