Analysis of InGaN/GaN VCSELs
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[1] Jerry R. Meyer,et al. Band parameters for nitrogen-containing semiconductors , 2003 .
[2] Shuji Nakamura,et al. Physics of high-power InGaN/GaN lasers , 2002 .
[3] Seoung-Hwan Park,et al. Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells , 2002 .
[4] Oliver Ambacher,et al. Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures , 2002 .
[5] Larry A. Coldren,et al. Minimum temperature sensitivity of 1.55 μm vertical-cavity lasers at −30 nm gain offset , 1998 .
[6] Joachim Piprek,et al. GaN-based Light-Emitting Diodes , 2005 .
[7] A. Nurmikko,et al. Progress in Blue and Near-Ultraviolet Vertical-Cavity Emitters: A Status Report , 2003 .