A new dual channel resonant gate drive circuit for synchronous rectifiers

At high frequency applications, the gate drive loss of the power MOSFET becomes quite significant. A new dual channel low side resonant gate drive circuit is proposed in this paper. The proposed drive circuit can provide two symmetrical drive signals for driving two MOSFETs. It can recover most of the driving energy and clamp the gate and source voltage of the driven MOSFETs to either drive voltage or ground via a low impedance path. The circuit can also alleviate the dv/dt issue. The proposed circuit consists of four switches and a single winding inductor. The proposed resonant gate drive circuit can be used to drive the synchronous MOSFETs in a current doubler or full-wave rectifier. It can also be used to drive the primary MOSFETs in push-pull converters

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