论文信息 - Room‐temperature operation of distributed‐Bragg‐confinement Ga1−xAlxAs‐GaAs lasers grown by metalorganic chemical vapor deposition

Room‐temperature operation of distributed‐Bragg‐confinement Ga1−xAlxAs‐GaAs lasers grown by metalorganic chemical vapor deposition

Room‐temperature operation of new type of Ga1−xAlxAs‐GaAs laser employing distributed Bragg reflectors for optical and carrier confinement has been demonstrated. These distributed‐Bragg‐confinement lasers are grown by metalorganic chemical vapor deposition and exhibit low‐threshold current densities and small angular beam divergence.

P. D. Dapkus | R. D. Dupuis | P. Dapkus | R. Dupuis

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