论文信息 - One watt gallium arsenide class-E power amplifier with a thin-film bulk acoustic resonator filter embedded in the output network

One watt gallium arsenide class-E power amplifier with a thin-film bulk acoustic resonator filter embedded in the output network

Integration of a class-E power amplifier (PA) and a thin-film bulk acoustic wave resonator (FBAR) filter is shown to provide high power added efficiency in addition to superior out-of-band spectrum suppression. A discrete gallium arsenide pseudomorphic high-electron-mobility transistor is implemented to operate as a class-E amplifier from 2496 to 2690 MHz. The ACPF7041 compact bandpass FBAR filter is incorporated to replace the resonant LC tank in a traditional class-E PA. To reduce drain voltage stress, the supply choke is replaced by a finite inductance. The fabricated PA provides up to 1 W of output power with a peak power added efficiency (PAE) of 58%. The improved out-of-band spectrum filtering is compared to a traditional class-E with discrete LC resonant filtering. Such PAs can be combined with linearisation techniques to reduce out-of-band emissions.

Kyle D. Holzer | Jeffrey S. Walling

[1] Changsik Yoo,et al. A common-gate switched 0.9-W class-E power amplifier with 41% PAE in 0.25-/spl mu/m CMOS , 2001 .

[2] Sangwook Nam,et al. Size-Reduction and Harmonic-Rejection of Microwave Amplifiers using Spiral-Defected Ground Structure , 2003, 2003 33rd European Microwave Conference, 2003.

[3] No Sokal,et al. CLASS-E - NEW CLASS OF HIGH-EFFICIENCY TUNED SINGLE-ENDED SWITCHING POWER AMPLIFIERS , 1975 .

[4] Jeffrey S. Walling,et al. Linearizing CMOS Switching Power Amplifiers Using Supply Regulators , 2010, IEEE Transactions on Circuits and Systems II: Express Briefs.

[5] H. Morkner,et al. An integrated FBAR filter and PHEMT switched-amp for wireless applications , 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).