论文信息 - Measurement of mobility-lifetime product in hydrogenated amorphous silicon p-i-n type diodes

Measurement of mobility-lifetime product in hydrogenated amorphous silicon p-i-n type diodes

We have applied the junction recovery technique to different configurations of hydrogenated amorphous silicon type diodes and show that the recovered charge consists predominantly of holes. The technique is used for the measurement of the mobility‐lifetime product for recombination, which was found to be dependent upon the level and type of doping.

A. Hermann | R. Konenkamp | Arun Madan

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