Numerical analysis of photonic-crystal VCSELs

The introduction of a photonic-crystal to the VCSEL produces single mode emission in a very broad range of applied currents. The mechanism responsible for the discrimination of high-order modes originates from two counter-acting phenomena: 1) the PhC introduces lateral mode confinement through a strong waveguide effect and additionally by the Bragg reflections from a regular net of PhC holes 2) the holes of the PhC destroy the vertical periodicity of the DBR and contribute to the selective reduction in reflectivity of the mirror. As a result, the mode which overlaps the holes of the photonic crystal leaks through and becomes discriminated. We present numerical analysis of the influence of parameters of photonic crystal on the wavelength of emission, modal gain, slope efficiency, emitted power and tuning range in single mode VCSELs. We recognise several mechanisms determining high power emission in the single mode regime, which are: selective leakage, thermal focusing, waveguide effect induced by the photonic-crystal, gain spectrum red shift and its maximum reduction with increase of driving currents. We show that careful design of the photonic crystal allows for 10% increase in the emitted power of a singlemode regime and it allows for broad range of the steering currents from 5 to 50 mA. Such attributes support tuning of the single-mode emission over the 10 nm range of the spectrum.

[1]  Hugo Thienpont,et al.  Optimal photonic-crystal parameters assuring single-mode operation of 1300 nm AlInGaAs vertical-cavity surface-emitting laser , 2009 .

[2]  Joachim Piprek,et al.  What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes? , 2002 .

[3]  E. Gini,et al.  The refractive index of InP and its temperature dependence in the wavelength range from 1.2 /spl mu/m to 1.6 /spl mu/m , 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.

[4]  K. Panajotov,et al.  PlaneWave Admittance Method- a novel approach for determining the electromagnetic modes in photonic structures. , 2005, Optics express.

[5]  Robert P. Sarzała,et al.  Optimization of 1.3 µm GaAs-based oxide-confined (GaIn)(NAs) vertical-cavity surface-emitting lasers for low-threshold room-temperature operation , 2004 .

[6]  Anand Gopinath,et al.  Polarization-insensitive quantum-well semiconductor optical amplifiers , 2002 .

[7]  R. Michalzik,et al.  High-Output-Power Single-Higher-Order Transverse Mode VCSEL With Shallow Surface Relief , 2011, IEEE Photonics Technology Letters.

[8]  Loss-Induced Confinement in Photonic Crystal Vertical-Cavity Surface-Emitting Lasers , 2007, IEEE Journal of Quantum Electronics.

[9]  H. Sigg,et al.  The refractive index of AlxGa1−xAs below the band gap: Accurate determination and empirical modeling , 2000 .

[10]  J. Merz,et al.  Rapid thermal alloyed ohmic contact on inp , 1987 .

[11]  Delai Zhou,et al.  High-power single-mode antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers , 2002 .

[12]  Wenjun Zhou,et al.  Reduced divergence angle of photonic crystal vertical-cavity surface-emitting laser , 2009 .

[13]  Jen-Inn Chyi,et al.  Theoretical Study of the Temperature Dependence of 1.3-pm AlGaInAs-InP Multiple-Quantum-Well Lasers , 1996 .

[14]  K. Panajotov,et al.  Single mode condition and modes discrimination in photonic-crystal 1.3 mum AlInGaAs/InP VCSEL. , 2007, Optics express.

[15]  M. Dems,et al.  Precise Lateral Mode Control in Photonic Crystal Vertical-Cavity Surface-Emitting Lasers , 2011, IEEE Journal of Quantum Electronics.

[16]  Gregory Belenky,et al.  Novel design of AlGaInAs-InP lasers operating at 1.3 /spl mu/m , 1995 .

[17]  M. Tan,et al.  Mode Control in Photonic Crystal Vertical-Cavity Surface-Emitting Lasers and Coherent Arrays , 2009, IEEE Journal of Selected Topics in Quantum Electronics.

[18]  Kent D. Choquette,et al.  Progress in Photonic Crystal Vertical Cavity Lasers , 2005, IEICE Trans. Electron..

[19]  Hugo Thienpont,et al.  Strong modes discrimination and low threshold in cw regime of 1300 nm AlInGaAs/InP VCSEL induced by photonic crystal , 2009 .

[20]  Rainer Michalzik,et al.  4.8 mW singlemode oxide confined top-surface emitting vertical-cavity laser diodes , 1997 .

[21]  Alexei Sirbu,et al.  Long-wavelength VCSELs: Power-efficient answer , 2009 .

[22]  Comparison of Exactness of Scalar and Vectorial Optical Methods Used to Model a VCSEL Operation , 2007, IEEE Journal of Quantum Electronics.

[23]  M.-C. Amann,et al.  Long-wavelength VCSELs , 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..

[24]  G. G. Stokes "J." , 1890, The New Yale Book of Quotations.

[25]  Ian H. White,et al.  1.3-/spl mu/m quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: a theoretical study , 2002 .

[26]  A. W. Jackson,et al.  High-power 1320-nm wafer-bonded VCSELs with tunnel junctions , 2003, IEEE Photonics Technology Letters.